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Fujitsu creates a new type of non-volatile memory – ReRAM

Fujitsu has presented the first results of the development of a new type of non-volatile random access memory – resistive (resistive RAM, ReRAM).

Aimed at the embedded applications market, the novelty is positioned as a replacement for flash memory. The development is expected to be commercialized around 2021. Intel, Spansion and Nippon Telegraph and Telephone (NTT) are also known to be developing ReRAM.

There are several reasons Fujitsu is considering ReRAM as a replacement for embedded memory. The developer believes that ReRAM is comparable to flash memory in terms of power consumption, read time, cell area and process temperature. The supply voltage and write current of the new memory are at 1.8 V and 100 μA, respectively. Reading time – 10 ns or less. The cell size does not exceed 8 units of the design standard in area, the process temperature is 400 ° C or less. For all of the above parameters, other alternative types of memory (for example, PRAM – phase-state memory or MRAM – magnetoresistive) cannot yet compete with flash memory.

At the same time, ReRAM demonstrates high reliability when working in high ambient temperatures. This can be a significant advantage when it comes to applications, say, and automotive on-board electronics – a particularly attractive segment of the embedded applications market. In addition, the company hopes to reduce manufacturing costs as ReRAM can be embedded in highly integrated logic circuits by adding two additional masks to the process.

The principle of operation of the new memory is based on the use of “binary oxide” – a metal oxide composed of two types of elements. At the first stage, conductive fibers with low resistance are formed in the oxide film (in the photo – TiOx) (the process of “formation”) – for this, a high voltage is applied to the cell. During operation, under the influence of voltage, the positive side of the cell (to which the positive pole is connected) is oxidized during the “reset” process (writing a logical “0”), so that the resistance increases. The process of “setting” (writing a logical “1”) is based on the fact that the positive side of the fiber is restored by heating (Joule heat), which again reduces its resistance.

Source: Nikkei Business Publications

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