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Hynix ready to start production of 70nm flash memory ahead of Samsung
Striving to keep up with the more successful (in terms of the absence of obstacles and duties) competitors, the Korean memory manufacturer Hynix is going to intensify the transfer of flash memory production to the standards of 70nm technological process.
According to the source, the company is already slowly preparing for the release of the first samples of 70-nm NAND flash memory, the density of which will be up to 16 Gbit (this, by the way, is an application for a new density record that Hynix will set together with Samsung). Hynix currently supplies 90nm 1-, 2-, 4- and 8-Gbps NAND flash memory, and they are based on a simpler SLC (single-level cell) technology than designs that allow you to write multiple bits in a single cell.
According to the source citing the Hynix roadmap, the 16-Gbps 70-nm chips will see the light of day in November, and they will be mass-produced next year.
Thus, Hynix’s most serious plans are obvious – if they are destined to come true, the company will become one of the technology leaders. Samsung announced last month that it is developing its first 16Gb NAND flash chip with a 50nm process. However, Hynix has every chance of getting ahead of its competitor in bringing the solution to the market.
I must say that, being a relatively new player in the flash memory market, Hynix is developing very dynamically. In the second quarter of this year, the company’s NAND flash sales grew 57%, placing it second behind Samsung and Toshiba. And Hynix is not going to stop – another plant is currently under construction, and the production lines for the production of DRAM are being transferred to the production of flash memory.
It is also worth noting that the creditors of the South Korean company are satisfied with the progress it has made and are ready to return 24% of the shares to circulation. Hynix is currently 81% owned by creditors.