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Freescale develops gallium arsenide MOSFETs

Freescale announced the creation of a MOSFET (metal oxide semiconductor), or MOSFET for short; using gallium arsenide. The company plans to use such transistors in high-frequency power amplifiers and high-speed semiconductor analog-to-digital converters.

The overwhelming majority of modern digital microcircuits are produced just using field-effect transistors MOS or CMOS structures, only from a more affordable material, silicon. MOSFETs or MOSFETs are also the basis for designs designed to increase the speed of silicon chips: with a three-dimensional (“fin”) gate or triple drain.

Gallium arsenide transistors are more promising in terms of speed (limiting frequencies are up to 20 times higher than silicon analogs), however, according to Freescale, so far it has not been possible to create MOSFET transistors from this material, and high-speed active elements and integrated circuits have traditionally been made according to planar bipolar transistor technology.

The main difficulty was the application of silicon dioxide or some other insulating material in the gate region to the gallium arsenide source. Freescale has managed to find a dielectric that evenly “sits” on a gallium arsenide base. What kind of material is this, the source does not say.

Freescale expects MOSFETs to initially be used in a narrow range of specialized devices to complement traditional silicon chips. And while demonstrating the feasibility of using an industry-proven approach is likely to be another building block for future high-performance ICs, there is a serious obstacle in their way to the masses – the cost price is much higher than that of silicon.

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