Asrock b75 pro3-m

 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 

Are you a human?.ASRock B75 PRO3-M LGA Intel B75 DDR3 Micro-ATX Motherboard | eBay

 

ASRock Item model number B75 PRO3-M Item Weight 2 pounds Product Dimensions x x inches Item Dimensions LxWxH x x inches Computer Memory Type DDR3 SDRAM Manufacturer ASRock ASIN BRQ0HSA Is Discontinued By Manufacturer No Date First Available November 14, Reviews: Actual power draw may differ from listed values. Component. Estimated Wattage. Total: 0W. Set Price Alert. delete. Send an e-mail alert if the price of any Video Card matching the filter criteria drops to: $. Find many great new & used options and get the best deals for ASRock B75 PRO3-M LGA Intel B75 DDR3 Micro-ATX Motherboard at the best online prices at eBay! Free shipping for many products!End date: Apr 09,

 

Asrock b75 pro3-m.Are you a human?

Find many great new & used options and get the best deals for ASRock B75 PRO3-M LGA Intel B75 DDR3 Micro-ATX Motherboard at the best online prices at eBay! Free shipping for many products!End date: Apr 09, #AliExpress #SugiStore99+=-+=-+=-+=-+=-+=-+=-+=-+=-+=-+=-+=-+=-+=-+=-+=-+=-+=-Get LGA Asrock B75 Pro3-M Motherboard + CPU Intel Core i5 Motherboard. ASRock B75 Pro3-M DDR3 Socket LGA MicroATX Motherboard *LATEST BIOS* Condition: Seller refurbished. Ended: Mar 08, Price: GBP [History: 2 sold] Approximately US $ (including shipping) Shipping: GBP (approx. US $) Expedited End date: Mar 08,
 
 
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ASRock B75 Pro3-M DDR3 Socket LGA MicroATX Motherboard *LATEST BIOS* | eBay
Seiko Epson launches world’s first polymer FeRAM

Seiko Epson Corporation Announces Development of Organic Ferroelectric Memory (FeRAM) Made on Flexible Polymer Substrate. Although many companies have already reported successful FeRAM developments, Seiko Epson is the first to execute it on a flexible substrate.

Seiko Epson single-transistor (1T) memory cells are made according to a technological process that uses several steps:

  • one. first, source and drain electrodes made of gold / copper are applied to the polycarbonate film by sputtering in vacuum
  • 2. a layer of organic semiconductor F8T2 is applied
  • 3. a layer of ferroelectric P (VDF / TrFE) is applied (copolymer of vinylidene fluoride and fluoroethylene)
  • four. a silver gate electrode is created by inkjet printing using “ink” containing silver

The area of ​​the device shown in the figure, containing nine ferroelectric chargers, is 15 sq. mm. Gate width 300 μm, length 25, 35 or 45 μm.

Polymer-based single-transistor ferroelectric memory cells are efficient at a recording voltage of +/- 15 V. The recording voltage could have been higher – with an insulating layer thickness of 0.78 microns, it was 75 V, so its thickness was reduced to 0.13 microns. A further decrease turned out to be impossible due to the deterioration of the hysteresis characteristics, which, in fact, underlie the memory. The mobility of charge carriers is quite high – 0.00011 kv. cm / (V * s).

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